Textile-Integrated ZnO-Based Thermoelectric Device Using Atomic Layer Deposition

Giovanni Marin, Ryoji Funahashi, Maarit Karppinen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
42 Downloads (Pure)

Abstract

Herein, a full thermoelectric (TE) device fabricated on textile using atomic layer deposition (ALD) and molecular layer deposition (MLD) thin-film techniques is demonstrated. The device consists of n-type ALD-grown ZnO or ALD/MLD-grown ZnO-organic components and p-type spray/immersion-coated PEDOT:PSS components. Different fabrication strategies and device designs (vertical and longitudinal) are investigated. The performance is evaluated by measuring the open-circuit voltage generated by the device over a range of temperature differences (between the hot and cold sides) up to 60 °C. At a fixed ΔT, the voltage generated is found to increase with increasing ZnO or ZnO-organic film thickness. An attractive feature with both ALD and MLD is that the film grows in a conformal manner on the textile fibers so that the entire textile piece becomes an active part of the device, corresponding to a remarkable coating-thickness increase. The voltage generated can also be increased by combining more TE pairs (even by just increasing the number of pairs by cutting the TE pads into smaller pieces). This research has thus proven the feasibility of ALD and MLD techniques in combination with a textile substrate in reinforcing the prospects of wearable thermoelectrics.

Original languageEnglish
Article number2000535
Number of pages9
JournalAdvanced Engineering Materials
Volume22
Issue number12
Early online date18 Jul 2020
DOIs
Publication statusPublished - Dec 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • atomic layer deposition
  • devices
  • textiles
  • thermoelectric
  • thin films

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