Terahertz emission from GaN epilayers at lateral electric field

V.A. Shalygin, L.E. Vorobjev, D.A. Firsov, V.Yu. Panevin, A.N. Sofronov, G.A. Melentyev, A.V. Antonov, V.I. Gavrilenko, S. Suihkonen, P.T. Törma, M. Ali, H. Lipsanen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication35th International Conference on Infrared, Millimeter, and Terahertz Waves
PublisherIEEE
Pages1-2
Number of pages2
ISBN (Print)978-1-4244-6655-9
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Infrared, Millimeter and Terahertz Waves - Rome, Italy
Duration: 5 Oct 201010 Oct 2010

Conference

ConferenceInternational Conference on Infrared, Millimeter and Terahertz Waves
CountryItaly
CityRome
Period05/10/201010/10/2010

Cite this

Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Y., Sofronov, A. N., Melentyev, G. A., Antonov, A. V., Gavrilenko, V. I., Suihkonen, S., Törma, P. T., Ali, M., & Lipsanen, H. (2010). Terahertz emission from GaN epilayers at lateral electric field. In 35th International Conference on Infrared, Millimeter, and Terahertz Waves (pp. 1-2). [5612519] IEEE. https://doi.org/10.1109/ICIMW.2010.5612519