Terahertz absorption in GaN epitaxial layers under lateral electric field

R. M. Balagula, M. Ya Vinnichenko, G. A. Melentev, M. D. Moldavskaya, V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, S. N. Danilov, S. Suihkonen

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    Abstract

    Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.

    Original languageEnglish
    Article number012147
    Number of pages6
    JournalJournal of Physics: Conference Series
    Volume741
    Issue number1
    DOIs
    Publication statusPublished - 15 Sep 2016
    MoE publication typeA1 Journal article-refereed
    EventInternational School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - St. Petersburg, Russian Federation
    Duration: 28 Mar 201630 Mar 2016
    Conference number: 3

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    Balagula, R. M., Vinnichenko, M. Y., Melentev, G. A., Moldavskaya, M. D., Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Danilov, S. N., & Suihkonen, S. (2016). Terahertz absorption in GaN epitaxial layers under lateral electric field. Journal of Physics: Conference Series, 741(1), [012147]. https://doi.org/10.1088/1742-6596/741/1/012147