Variation of absorption of terahertz radiation in lateral electric field was investigated in GaN epitaxial layers. Different behaviour of the absorption modulation in electric field was observed for radiation polarized along electric field and perpendicular to it. Joint analysis of optical and transport measurements let us obtain field dependencies of mobility, electron concentration and absorption cross-section. For terahertz radiation polarized perpendicular to the electric field, results are in accordance with Drude model of free electron absorption. Another polarization demonstrates significant deviation that is yet to be studied more thoroughly.
|Number of pages||6|
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 15 Sep 2016|
|MoE publication type||A1 Journal article-refereed|
|Event||International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - St. Petersburg, Russian Federation|
Duration: 28 Mar 2016 → 30 Mar 2016
Conference number: 3