Tensile-strained GaAsN quantum dots on InP

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Tensile-strained GaAsN quantum dots on InP. / Pohjola, P.; Hakkarainen, T.; Koskenvaara, Hannu; Sopanen, M.; Lipsanen, H.; Sainio, J.

In: Applied Physics Letters, Vol. 90, No. 17, 172110, 2007, p. 1-3.

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Pohjola, P. ; Hakkarainen, T. ; Koskenvaara, Hannu ; Sopanen, M. ; Lipsanen, H. ; Sainio, J. / Tensile-strained GaAsN quantum dots on InP. In: Applied Physics Letters. 2007 ; Vol. 90, No. 17. pp. 1-3.

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@article{6203358d88584a40946c41b1dbf6cada,
title = "Tensile-strained GaAsN quantum dots on InP",
abstract = "Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.",
keywords = "growth, InAs, InxGa1-xAs, islands, vapor phase epitaxy, growth, InAs, InxGa1-xAs, islands, vapor phase epitaxy, growth, InAs, InxGa1-xAs, islands, vapor phase epitaxy",
author = "P. Pohjola and T. Hakkarainen and Hannu Koskenvaara and M. Sopanen and H. Lipsanen and J. Sainio",
year = "2007",
doi = "10.1063/1.2719662",
language = "English",
volume = "90",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "17",

}

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TY - JOUR

T1 - Tensile-strained GaAsN quantum dots on InP

AU - Pohjola, P.

AU - Hakkarainen, T.

AU - Koskenvaara, Hannu

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Sainio, J.

PY - 2007

Y1 - 2007

N2 - Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.

AB - Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.

KW - growth

KW - InAs

KW - InxGa1-xAs

KW - islands

KW - vapor phase epitaxy

KW - growth

KW - InAs

KW - InxGa1-xAs

KW - islands

KW - vapor phase epitaxy

KW - growth

KW - InAs

KW - InxGa1-xAs

KW - islands

KW - vapor phase epitaxy

UR - http://dx.doi.org/10.1063/1.2719662

U2 - 10.1063/1.2719662

DO - 10.1063/1.2719662

M3 - Article

VL - 90

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 172110

ER -

ID: 3357284