Tensile-strained GaAsN quantum dots on InP

P. Pohjola, T. Hakkarainen, Hannu Koskenvaara, M. Sopanen, H. Lipsanen, J. Sainio

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Self-assembled quantum dots are typically fabricated from compressive-strained material systems, e.g., InAs on GaAs. In this letter, self-assembled quantum dots from tensile-strained GaAsN on InP are demonstrated. GaAsN on InP has type-I band alignment. Stranski-Krastanov growth mode is not observed, but in situ annealing of the uncapped samples results in the formation of islands. Photoluminescence spectra from the buried GaAsN show separate peaks due to a wetting layer and islands around the energies of 1.3 and 1.1eV, respectively.
Original languageEnglish
Article number172110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • growth
  • InAs
  • InxGa1-xAs
  • islands
  • vapor phase epitaxy

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