Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Chiara Modanese

  • Maurizio Acciarri
  • Simona Binetti
  • Anne Karin Søiland
  • Marisa Di Sabatino
  • Lars Arnberg

Research units

  • ELKEM Solar
  • Norwegian University of Science and Technology
  • University of Milano-Bicocca

Abstract

In this study, we have investigated the Hall majority carrier mobility of p-type, compensated multicrystalline solar grade silicon (SoG-Si) wafers for solar cells in the temperature range 70-373 K. At low temperature (~70 K) the difference in the mobilities measured for the compensated and the uncompensated reference samples is the highest, and the measured mobility shows dependence on the compensation ratio. Mobilities decrease with increasing temperature, and towards room temperature, the mobilities of the different samples are in the same range. The measurements show that, for these samples, the contribution from lattice scattering is dominating over ionized impurity scattering at room temperature. In the range of interest for silicon solar cells (above room temperature), the trend in carrier mobility is similar for all the samples, and the measured value for the sample with low compensation ratio and low doping density is comparable to the uncompensated references. A comparison of resistivity and majority carrier density measured by the Hall setup at room temperature and by four-point probe and glow discharge mass spectroscopy, respectively, is reported as well.

Details

Original languageEnglish
Pages (from-to)1469-1477
Number of pages9
JournalProgress in Photovoltaics
Volume21
Issue number7
Publication statusPublished - Nov 2013
MoE publication typeA1 Journal article-refereed

    Research areas

  • carrier mobility, compensation, Hall effect, majority carrier density, multicrystalline silicon

ID: 3319441