Temperature-dependent Hall effect measurements on Cz-grown silicon pulled from compensated and recycled feedstock materials

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Norwegian University of Science and Technology

Abstract

In this work, temperature-dependent Hall effect measurements in the temperature range 88-350 K were carried out to investigate the electrical properties of three solar grade p-type Czochralski (Cz) silicon ingots, pulled from recycled p-type multi-crystalline silicon top cuts and compensated solar grade (SoG) feedstock. Material bulk properties including Hall mobility, carrier density and resistivity as functions of temperature were studied to evaluate the influence of compensation and impurities. Recycled top cut replacing poly-silicon as feedstock leads to a more uniform resistivity. In addition, higher concentrations of O and C, give rise to oxygen related defects, which act as neutral scattering centers displaying only a slight influence on the electrical properties at low temperature compared to the dominant compensation effect. The electrical performances of all samples are shown to be strongly dependent on compensation level, especially at the lowest temperature (∼88 K). A significant presence of incompletely ionized phosphorus was deduced through the measured carrier density. The temperature-dependent Hall effect measurements fit Klaassen's mobility model very well at low temperatures (

Details

Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalJournal of Crystal Growth
Volume429
Publication statusPublished - 23 Aug 2015
MoE publication typeA1 Journal article-refereed

    Research areas

  • A1. As-grown defects, A1. Carrier mobility, A1. Compensation, A1. Hall effect, A2. Cz silicon

ID: 3319124