Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

Research output: Contribution to journalConference articleScientificpeer-review

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Abstract

A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.
Original languageEnglish
Article number1168207
Number of pages6
JournalSPIE CONFERENCE PROCEEDINGS
Volume11682
DOIs
Publication statusPublished - 5 Mar 2021
MoE publication typeA4 Article in a conference publication
EventOptical Components and Materials - Virtual, Online
Duration: 6 Mar 202112 Mar 2021
Conference number: 18

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