Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen; Antti Haarahiltunen; Michael Serue; Daria Kriukova; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Mikko A. Juntunen

doi:10.1117/12.2577128

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

ElFys Inc.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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Abstract

A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

Original language	English
Title of host publication	Optical Components and Materials XVIII
Publisher	SPIE
Number of pages	6
Volume	11682
ISBN (Electronic)	978-1-5106-4200-3
DOIs	https://doi.org/10.1117/12.2577128
Publication status	Published - 5 Mar 2021
MoE publication type	A4 Conference publication
Event	Optical Components and Materials - Virtual, Online Duration: 6 Mar 2021 → 12 Mar 2021 Conference number: 18

Publication series

Name	SPIE Conference Proceedings
Publisher	SPIE
ISSN (Print)	0277-786X

Conference

Conference	Optical Components and Materials
City	Virtual, Online
Period	06/03/2021 → 12/03/2021

Access to Document

10.1117/12.2577128

Heinonen_2021_SPIE_Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodesFinal published version, 616 KB

PREIN: Photonics Research and Innovation
Mäkelä, K. (Principal investigator)
01/01/2019 → 31/12/2022
Project: Academy of Finland: Other research funding

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

@inproceedings{f58004d0aec246afb245e9248ca13f77,

title = "Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes",

abstract = "A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.",

author = "Juha Heinonen and Antti Haarahiltunen and Michael Serue and Daria Kriukova and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juntunen, {Mikko A.}",

year = "2021",

month = mar,

day = "5",

doi = "10.1117/12.2577128",

language = "English",

volume = "11682",

series = "SPIE Conference Proceedings",

publisher = "SPIE",

booktitle = "Optical Components and Materials XVIII",

address = "United States",

note = "Optical Components and Materials ; Conference date: 06-03-2021 Through 12-03-2021",

}

Heinonen, J, Haarahiltunen, A, Serue, M, Kriukova, D, Vähänissi, V, Pasanen, TP, Savin, H & Juntunen, MA 2021, Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes. in Optical Components and Materials XVIII. vol. 11682, SPIE Conference Proceedings, SPIE, Optical Components and Materials, Virtual, Online, 06/03/2021. https://doi.org/10.1117/12.2577128

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes. / Heinonen, Juha; Haarahiltunen, Antti; Serue, Michael et al.
Optical Components and Materials XVIII. Vol. 11682 SPIE, 2021. (SPIE Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Serue, Michael

AU - Kriukova, Daria

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Juntunen, Mikko A.

N1 - Conference code: 18

PY - 2021/3/5

Y1 - 2021/3/5

N2 - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

AB - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

U2 - 10.1117/12.2577128

DO - 10.1117/12.2577128

M3 - Conference article in proceedings

VL - 11682

T3 - SPIE Conference Proceedings

BT - Optical Components and Materials XVIII

PB - SPIE

T2 - Optical Components and Materials

Y2 - 6 March 2021 through 12 March 2021

ER -

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Abstract

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Projects

PREIN: Photonics Research and Innovation

Equipment

OtaNano

OtaNano - Nanofab

Cite this