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Abstract
A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.
Original language | English |
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Title of host publication | Optical Components and Materials XVIII |
Publisher | SPIE |
Number of pages | 6 |
Volume | 11682 |
ISBN (Electronic) | 978-1-5106-4200-3 |
DOIs | |
Publication status | Published - 5 Mar 2021 |
MoE publication type | A4 Conference publication |
Event | Optical Components and Materials - Virtual, Online Duration: 6 Mar 2021 → 12 Mar 2021 Conference number: 18 |
Publication series
Name | SPIE Conference Proceedings |
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Publisher | SPIE |
ISSN (Print) | 0277-786X |
Conference
Conference | Optical Components and Materials |
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City | Virtual, Online |
Period | 06/03/2021 → 12/03/2021 |
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Dive into the research topics of 'Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes'. Together they form a unique fingerprint.Projects
- 1 Finished
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PREIN: Photonics Research and Innovation
Mäkelä, K. (Principal investigator)
01/01/2019 → 31/12/2022
Project: Academy of Finland: Other research funding