Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen; Antti Haarahiltunen; Michael Serue; Daria Kriukova; Ville Vähänissi; Toni P. Pasanen; Hele Savin; Mikko A. Juntunen

doi:10.1117/12.2577128

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

Juha Heinonen, Antti Haarahiltunen, Michael Serue, Daria Kriukova, Ville Vähänissi, Toni P. Pasanen, Hele Savin, Mikko A. Juntunen

Research output: Contribution to journal › Conference article › Scientific › peer-review

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Abstract

A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

Original language	English
Article number	1168207
Number of pages	6
Journal	SPIE CONFERENCE PROCEEDINGS
Volume	11682
DOIs	https://doi.org/10.1117/12.2577128
Publication status	Published - 5 Mar 2021
MoE publication type	A4 Article in a conference publication
Event	Optical Components and Materials - Virtual, Online Duration: 6 Mar 2021 → 12 Mar 2021 Conference number: 18

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Heinonen_2021_SPIE_Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodesFinal published version, 616 KB

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@article{f58004d0aec246afb245e9248ca13f77,

title = "Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes",

abstract = "A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.",

author = "Juha Heinonen and Antti Haarahiltunen and Michael Serue and Daria Kriukova and Ville V{\"a}h{\"a}nissi and Pasanen, {Toni P.} and Hele Savin and Juntunen, {Mikko A.}",

year = "2021",

month = mar,

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doi = "10.1117/12.2577128",

language = "English",

volume = "11682",

journal = "SPIE CONFERENCE PROCEEDINGS",

issn = "0277-786X",

publisher = "SPIE - The International Society for Optical Engineering",

note = "Optical Components and Materials ; Conference date: 06-03-2021 Through 12-03-2021",

}

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes. / Heinonen, Juha; Haarahiltunen, Antti; Serue, Michael; Kriukova, Daria; Vähänissi, Ville ; Pasanen, Toni P.; Savin, Hele; Juntunen, Mikko A.

In: SPIE CONFERENCE PROCEEDINGS, Vol. 11682, 1168207, 05.03.2021.

Research output: Contribution to journal › Conference article › Scientific › peer-review

TY - JOUR

T1 - Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

AU - Heinonen, Juha

AU - Haarahiltunen, Antti

AU - Serue, Michael

AU - Kriukova, Daria

AU - Vähänissi, Ville

AU - Pasanen, Toni P.

AU - Savin, Hele

AU - Juntunen, Mikko A.

N1 - Conference code: 18

PY - 2021/3/5

Y1 - 2021/3/5

N2 - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

AB - A high-quality photodiode has high signal-to-noise ratio (SNR), which is ultimately defined by the responsivity and dark current of the photodiode. Black silicon induced junction photodiodes have been shown to have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm at room temperature (RT). Here we present their spectral responsivity stability and dark current at different temperatures. Both quantities show temperature dependencies similar to conventional pn-junction photodiodes, proving that black silicon photodiodes maintain their improved SNR also at temperatures other than RT.

U2 - 10.1117/12.2577128

DO - 10.1117/12.2577128

M3 - Conference article

VL - 11682

JO - SPIE CONFERENCE PROCEEDINGS

JF - SPIE CONFERENCE PROCEEDINGS

SN - 0277-786X

M1 - 1168207

T2 - Optical Components and Materials

Y2 - 6 March 2021 through 12 March 2021

ER -

Temperature dependency of responsivity and dark current of nearly ideal black silicon photodiodes

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