Temperature dependence of the electron mobility in photorefractive Bi12SiO20
Research output: Contribution to journal › Article › Scientific › peer-review
- University of Southern California
We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bil2SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.
|Number of pages||4|
|Journal||Journal of the Optical Society of America B: Optical Physics|
|Publication status||Published - 1992|
|MoE publication type||A1 Journal article-refereed|