Temperature dependence of the electron mobility in photorefractive Bi12SiO20

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  • University of Southern California


We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bil2SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.


Original languageEnglish
Pages (from-to)1428-1431
Number of pages4
JournalJournal of the Optical Society of America B: Optical Physics
Issue number8
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

ID: 5581591