Abstract
We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bil2SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.
| Original language | English |
|---|---|
| Pages (from-to) | 1428-1431 |
| Number of pages | 4 |
| Journal | Journal of the Optical Society of America B: Optical Physics |
| Volume | 9 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1992 |
| MoE publication type | A1 Journal article-refereed |
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Nouchi, P., Partanen, J. P., & Hellwarth, R. W. (1992). Temperature dependence of the electron mobility in photorefractive Bi12SiO20. Journal of the Optical Society of America B: Optical Physics, 9(8), 1428-1431. https://doi.org/10.1364/JOSAB.9.001428