Temperature dependence of the electron mobility in photorefractive Bi12SiO20

P. Nouchi; J. P. Partanen; R. W. Hellwarth

doi:10.1364/JOSAB.9.001428

Temperature dependence of the electron mobility in photorefractive Bi₁₂SiO₂₀

P. Nouchi, J. P. Partanen, R. W. Hellwarth

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

22 Citations (Scopus)

Abstract

We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bi_l2SiO₂₀ by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.

Original language	English
Pages (from-to)	1428-1431
Number of pages	4
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	9
Issue number	8
DOIs	https://doi.org/10.1364/JOSAB.9.001428
Publication status	Published - 1992
MoE publication type	A1 Journal article-refereed

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abstract = "We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bil2SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.",

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