Abstract
We have measured the temperature dependence of the electron mobility in a single crystal of photorefractiven-type cubic Bil2SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrheniusform, with an activation energy of 320 ± 40 meV in the experimental range 270-310 K.
Original language | English |
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Pages (from-to) | 1428-1431 |
Number of pages | 4 |
Journal | Journal of the Optical Society of America B: Optical Physics |
Volume | 9 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1992 |
MoE publication type | A1 Journal article-refereed |