Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski; Ossi M. Hahtela; Alexander M. Savin; Sergey Novikov; Natalia Lebedeva

doi:10.1109/TIM.2011.2139290

Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski^*, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

^*Corresponding author for this work

VTT MIKES Metrology

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10^-8 Ωm range for 15-40 nm films. Temperature coefficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 10⁶/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10^-5/μA in 0.7 K-1 K temperature range.

Original language	English
Article number	5773491
Pages (from-to)	2469-2474
Number of pages	6
Journal	IEEE Transactions on Instrumentation and Measurement
Volume	60
Issue number	7
DOIs	https://doi.org/10.1109/TIM.2011.2139290
Publication status	Published - Jul 2011
MoE publication type	A1 Journal article-refereed

Keywords

Cryogenics
low temperature
palladium
resistance measurement
thin-film resistors

Access to Document

10.1109/TIM.2011.2139290

Cite this

@article{6d2574843e37477880984ad504bf719f,

title = "Temperature dependence of Pd thin-film cryoresistors",

abstract = "Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10-8 Ωm range for 15-40 nm films. Temperature coefficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 106/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10-5/μA in 0.7 K-1 K temperature range.",

keywords = "Cryogenics, low temperature, palladium, resistance measurement, thin-film resistors",

author = "Alexandre Satrapinski and Hahtela, {Ossi M.} and Savin, {Alexander M.} and Sergey Novikov and Natalia Lebedeva",

year = "2011",

month = jul,

doi = "10.1109/TIM.2011.2139290",

language = "English",

volume = "60",

pages = "2469--2474",

journal = "IEEE Transactions on Instrumentation and Measurement",

issn = "0018-9456",

publisher = "IEEE",

number = "7",

}

TY - JOUR

T1 - Temperature dependence of Pd thin-film cryoresistors

AU - Satrapinski, Alexandre

AU - Hahtela, Ossi M.

AU - Savin, Alexander M.

AU - Novikov, Sergey

AU - Lebedeva, Natalia

PY - 2011/7

Y1 - 2011/7

N2 - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10-8 Ωm range for 15-40 nm films. Temperature coefficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 106/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10-5/μA in 0.7 K-1 K temperature range.

AB - Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10-8 Ωm range for 15-40 nm films. Temperature coefficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 106/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10-5/μA in 0.7 K-1 K temperature range.

KW - Cryogenics

KW - low temperature

KW - palladium

KW - resistance measurement

KW - thin-film resistors

UR - http://www.scopus.com/inward/record.url?scp=79958269672&partnerID=8YFLogxK

U2 - 10.1109/TIM.2011.2139290

DO - 10.1109/TIM.2011.2139290

M3 - Article

AN - SCOPUS:79958269672

SN - 0018-9456

VL - 60

SP - 2469

EP - 2474

JO - IEEE Transactions on Instrumentation and Measurement

JF - IEEE Transactions on Instrumentation and Measurement

IS - 7

M1 - 5773491

ER -

Temperature dependence of Pd thin-film cryoresistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this