Temperature dependence of Pd thin-film cryoresistors

Alexandre Satrapinski*, Ossi M. Hahtela, Alexander M. Savin, Sergey Novikov, Natalia Lebedeva

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)


Cryoresistors based on Pd thin films were designed and investigated in the temperature range 50 mK-300 K. The resistors in the range 100 kΩ-1.3 MΩ were fabricated by thermal evaporation technique. Resistivity of Pd film at 293 K varies in (21-53) · 10-8 Ωm range for 15-40 nm films. Temperature coefficient of resistance at low temperatures depends on the thickness of the film. The lowest temperature coefficient in the range 3 K-4 K of about few parts in 106/K was obtained for 20-nm-thick film. Current coefficient measured on 20-nm-thin film 1.002-MΩ resistor does not exceed 2 · 10-5/μA in 0.7 K-1 K temperature range.

Original languageEnglish
Article number5773491
Pages (from-to)2469-2474
Number of pages6
JournalIEEE Transactions on Instrumentation and Measurement
Issue number7
Publication statusPublished - Jul 2011
MoE publication typeA1 Journal article-refereed


  • Cryogenics
  • low temperature
  • palladium
  • resistance measurement
  • thin-film resistors


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