Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

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Abstract

The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

Details

Original languageEnglish
Title of host publicationPhysics of Semiconductors
EditorsMJ Caldas, N Studart
Publication statusPublished - 2009
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Physics of Semiconductors - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008
Conference number: 29

Publication series

NameAIP Conference Proceedings
PublisherAIP
Volume1199
ISSN (Print)0094-243X

Conference

ConferenceInternational Conference on Physics of Semiconductors
Abbreviated titleICPS
CountryBrazil
CityRio de Janeiro
Period27/07/200801/08/2008

    Research areas

  • Carrier density, Electron affinity, InN, IV, IVT, Pt contact, Richardson constant, Schottky contact, Temperature dependence

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