Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content

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Abstract

The temperature dependent current-voltage (IVT) measurements on Au Schottky barrier diodes made on intrinsically p-type GaAs1-xNx were carried out. Three samples with small N content (x = 0.5 %, 0.7 % and 1 %) were studied. The temperature range was 10 - 320 K. All contacts were found to be of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory show a strong temperature dependence. The current voltage (IV) curves are fitted based on the TE theory, yielding a zero-bias carrier height (Phi(B0)) and a ideality factor (n) that decrease and increase with decreasing temperature, respectively. The linear fitting of Phi(B0) vs n and its subsequent evaluation for n = 1 give a zero-bias Phi(B0) in the order of 0.35 - 0.4 eV. From the reverse-bias IV study, it is found that the experimental carrier density (N-A) values increase with increasing temperature and are in agreement with the intrinsic carrier concentration for GaAs.

Details

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
EditorsJ Ihm, H Cheong
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
EventInternational Conference on the Physics of Semiconductors - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010
Conference number: 30

Publication series

NameAIP Conference Proceedings
PublisherAIP
Volume1399
ISSN (Print)0094-243X

Conference

ConferenceInternational Conference on the Physics of Semiconductors
Abbreviated titleICPS
CountryKorea, Republic of
CitySeoul
Period25/07/201030/07/2010

    Research areas

  • GaNAs, MOVPE, IV, Schottky contact, thermionic emission

ID: 6468126