Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

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Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. / Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro.

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. ed. / J Ihm; H Cheong. AIP, 2011. (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Rangel-Kuoppa, V-T, Knuutila, L, Sopanen, M, Lipsanen, H & Avila, A 2011, Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. in J Ihm & H Cheong (eds), PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. AIP Conference Proceedings, vol. 1399, AIP, International Conference on the Physics of Semiconductors, Seoul, Korea, Republic of, 25/07/2010. https://doi.org/10.1063/1.3666312

APA

Rangel-Kuoppa, V-T., Knuutila, L., Sopanen, M., Lipsanen, H., & Avila, A. (2011). Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. In J. Ihm, & H. Cheong (Eds.), PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (AIP Conference Proceedings; Vol. 1399). AIP. https://doi.org/10.1063/1.3666312

Vancouver

Rangel-Kuoppa V-T, Knuutila L, Sopanen M, Lipsanen H, Avila A. Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. In Ihm J, Cheong H, editors, PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. AIP. 2011. (AIP Conference Proceedings). https://doi.org/10.1063/1.3666312

Author

Rangel-Kuoppa, Victor-Tapio ; Knuutila, Lauri ; Sopanen, Markku ; Lipsanen, Harri ; Avila, Alejandro. / Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. editor / J Ihm ; H Cheong. AIP, 2011. (AIP Conference Proceedings).

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@inproceedings{fa72230724e54081bace824faa9d1973,
title = "Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes",
abstract = "Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.",
keywords = "GaInP, MOVPE, IV, Schottky contact, thermionic emission",
author = "Victor-Tapio Rangel-Kuoppa and Lauri Knuutila and Markku Sopanen and Harri Lipsanen and Alejandro Avila",
year = "2011",
doi = "10.1063/1.3666312",
language = "English",
series = "AIP Conference Proceedings",
publisher = "AIP",
editor = "J Ihm and H Cheong",
booktitle = "PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS",

}

RIS - Download

TY - GEN

T1 - Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

AU - Rangel-Kuoppa, Victor-Tapio

AU - Knuutila, Lauri

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Avila, Alejandro

PY - 2011

Y1 - 2011

N2 - Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

AB - Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

KW - GaInP

KW - MOVPE

KW - IV

KW - Schottky contact

KW - thermionic emission

U2 - 10.1063/1.3666312

DO - 10.1063/1.3666312

M3 - Conference contribution

T3 - AIP Conference Proceedings

BT - PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS

A2 - Ihm, J

A2 - Cheong, H

PB - AIP

ER -

ID: 6468191