Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen

doi:10.1063/1.3295546

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

134 Downloads (Pure)

Abstract

The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am ^-2K^-2. The Cheung's method to estimate the value of a possible series resistance R_S yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (N_D) value increases with temperature. © 2009 American Institute of Physics.

Original language	English
Title of host publication	Physics of Semiconductors
Editors	MJ Caldas, N Studart
Publisher	AIP
Pages	53-54
Number of pages	2
ISBN (Print)	9780735407367
DOIs	https://doi.org/10.1063/1.3295546
Publication status	Published - 2009
MoE publication type	A4 Article in a conference publication
Event	International Conference on the Physics of Semiconductors - Rio de Janeiro, Brazil Duration: 27 Jul 2008 → 1 Aug 2008 Conference number: 29

Publication series

Name	AIP Conference Proceedings
Publisher	AIP
Volume	1199
ISSN (Print)	0094-243X

Conference

Conference	International Conference on the Physics of Semiconductors
Abbreviated title	ICPS
Country	Brazil
City	Rio de Janeiro
Period	27/07/2008 → 01/08/2008

Keywords

Carrier density
Electron affinity
InN
IV
IVT
Pt contact
Richardson constant
Schottky contact
Temperature dependence

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title = "Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes",

abstract = "The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. {\textcopyright} 2009 American Institute of Physics.",

keywords = "Carrier density, Electron affinity, InN, IV, IVT, Pt contact, Richardson constant, Schottky contact, Temperature dependence",

author = "Victor-Tapio Rangel-Kuoppa and Sami Suihkonen and Markku Sopanen and Harri Lipsanen",

year = "2009",

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series = "AIP Conference Proceedings",

publisher = "AIP",

pages = "53--54",

editor = "MJ Caldas and N Studart",

booktitle = "Physics of Semiconductors",

note = "International Conference on the Physics of Semiconductors, ICPS ; Conference date: 27-07-2008 Through 01-08-2008",

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Rangel-Kuoppa, V-T, Suihkonen, S , Sopanen, M & Lipsanen, H 2009, Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes. in MJ Caldas & N Studart (eds), Physics of Semiconductors. AIP Conference Proceedings, vol. 1199, AIP, pp. 53-54, International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 27/07/2008. https://doi.org/10.1063/1.3295546

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes. / Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami ; Sopanen, Markku ; Lipsanen, Harri.

Physics of Semiconductors. ed. / MJ Caldas; N Studart. AIP, 2009. p. 53-54 (AIP Conference Proceedings; Vol. 1199).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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AU - Rangel-Kuoppa, Victor-Tapio

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

N1 - Conference code: 29

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N2 - The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

AB - The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

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KW - IVT

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