Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    3 Citations (Scopus)
    134 Downloads (Pure)


    The Current-Voltage (IV) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factor, the saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory. The ideality factor is temperature dependent, while the saturation current and the barrier height are not. The non conventional Richardson plot exhibits good linearity, corresponding to an activation energy of 2.08 eV and a Richardson constant of 18.7Am -2K-2. The Cheung's method to estimate the value of a possible series resistance RS yields a negligible resistance. From reverse-bias IV analysis, it is found that the experimental carrier density (ND) value increases with temperature. © 2009 American Institute of Physics.

    Original languageEnglish
    Title of host publicationPhysics of Semiconductors
    EditorsMJ Caldas, N Studart
    Number of pages2
    ISBN (Print)9780735407367
    Publication statusPublished - 2009
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on the Physics of Semiconductors - Rio de Janeiro, Brazil
    Duration: 27 Jul 20081 Aug 2008
    Conference number: 29

    Publication series

    NameAIP Conference Proceedings
    ISSN (Print)0094-243X


    ConferenceInternational Conference on the Physics of Semiconductors
    Abbreviated titleICPS
    CityRio de Janeiro


    • Carrier density
    • Electron affinity
    • InN
    • IV
    • IVT
    • Pt contact
    • Richardson constant
    • Schottky contact
    • Temperature dependence

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