Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

Victor-Tapio Rangel-Kuoppa; Lauri Knuutila; Markku Sopanen; Harri Lipsanen; Alejandro Avila

doi:10.1063/1.3666312

Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

Victor-Tapio Rangel-Kuoppa^*, Lauri Knuutila, Markku Sopanen, Harri Lipsanen, Alejandro Avila

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS
Editors	J Ihm, H Cheong
Publisher	American Institute of Physics
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666312
Publication status	Published - 2011
MoE publication type	A4 Article in a conference publication
Event	International Conference on the Physics of Semiconductors - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010 Conference number: 30

Publication series

Name	AIP Conference Proceedings
Publisher	AMER INST PHYSICS
Volume	1399
ISSN (Print)	0094-243X

Conference

Conference	International Conference on the Physics of Semiconductors
Abbreviated title	ICPS
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/2010 → 30/07/2010

Keywords

GaInP
MOVPE
IV
Schottky contact
thermionic emission

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Rangel-Kuoppa, V-T., Knuutila, L., Sopanen, M., Lipsanen, H., & Avila, A. (2011). Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. In J. Ihm, & H. Cheong (Eds.), PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS (AIP Conference Proceedings; Vol. 1399). American Institute of Physics. https://doi.org/10.1063/1.3666312

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title = "Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes",

abstract = "Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.",

keywords = "GaInP, MOVPE, IV, Schottky contact, thermionic emission",

author = "Victor-Tapio Rangel-Kuoppa and Lauri Knuutila and Markku Sopanen and Harri Lipsanen and Alejandro Avila",

year = "2011",

doi = "10.1063/1.3666312",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics",

editor = "J Ihm and H Cheong",

booktitle = "PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS",

address = "United States",

note = "International Conference on the Physics of Semiconductors, ICPS ; Conference date: 25-07-2010 Through 30-07-2010",

}

Rangel-Kuoppa, V-T, Knuutila, L, Sopanen, M , Lipsanen, H & Avila, A 2011, Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. in J Ihm & H Cheong (eds), PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. AIP Conference Proceedings, vol. 1399, American Institute of Physics, International Conference on the Physics of Semiconductors, Seoul, Korea, Republic of, 25/07/2010. https://doi.org/10.1063/1.3666312

Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. / Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku et al.

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. ed. / J Ihm; H Cheong. American Institute of Physics, 2011. (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

AU - Rangel-Kuoppa, Victor-Tapio

AU - Knuutila, Lauri

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Avila, Alejandro

N1 - Conference code: 30

PY - 2011

Y1 - 2011

N2 - Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

AB - Current-Voltage (IV) measurements on Au / Ga0.51In0.49P Schottky barrier diodes in the temperature range 10 -320 K were done. The Ga0.51In0.49P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance R-S and the ideality factor n. It is found that R-S is around 42 Omega at 10 K and decreases with temperature to around 7 Omega at 320 K. The IV curves were corrected for R-S. The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the T-0 effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.

KW - GaInP

KW - MOVPE

KW - IV

KW - Schottky contact

KW - thermionic emission

U2 - 10.1063/1.3666312

DO - 10.1063/1.3666312

M3 - Conference contribution

T3 - AIP Conference Proceedings

BT - PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS

A2 - Ihm, J

A2 - Cheong, H

PB - American Institute of Physics

T2 - International Conference on the Physics of Semiconductors

Y2 - 25 July 2010 through 30 July 2010

ER -

Rangel-Kuoppa V-T, Knuutila L, Sopanen M , Lipsanen H, Avila A. Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes. In Ihm J, Cheong H, editors, PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS. American Institute of Physics. 2011. (AIP Conference Proceedings). doi: 10.1063/1.3666312

Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

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