Temperature dependence of carrier relaxation in strain-induced quantum dots

M. Brasken, M. Lindberg, M. Sopanen, H. Lipsanen, J. Tulkki

Research output: Contribution to journalArticleScientificpeer-review

67 Citations (Scopus)
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Abstract

We report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism.
Original languageEnglish
Pages (from-to)R15993-R15996
Number of pages4
JournalPhysical Review B
Volume58
Issue number24
DOIs
Publication statusPublished - 15 Dec 1998
MoE publication typeA1 Journal article-refereed

Keywords

  • carrier relaxation
  • quantum dots

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