Temperature- and illumination-induced charge-state change in divacancies of GaTe

A. Zubiaga, F. Plazaola, J.A. Garcia, C. Martinez-Tomas, V. Muñoz-Sanjose

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
JournalPhysical Review B
Volume81
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Keywords

  • GaTe, vacancy type defects, positron annihilation spectroscopy

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