TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • M. G. Mynbaeva
  • A. V. Kremleva
  • D. A. Kirilenko
  • A. A. Sitnikova
  • A. I. Pechnikov
  • K. D. Mynbaev
  • V. I. Nikolaev
  • V. E. Bougrov
  • Harri Lipsanen

  • A. E. Romanov

Research units

  • Ioffe Institute
  • Perfect Crystals LLC
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

Details

Original languageEnglish
Pages (from-to)30-36
Number of pages7
JournalJournal of Crystal Growth
Volume445
Publication statusPublished - 1 Jul 2016
MoE publication typeA1 Journal article-refereed

    Research areas

  • Defects, Hydride vapor phase epitaxy, Metalorganic chemical vapor deposition, Semiconducting III-V materials

ID: 3301941