TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

M. G. Mynbaeva; A. V. Kremleva; D. A. Kirilenko; A. A. Sitnikova; A. I. Pechnikov; K. D. Mynbaev; V. I. Nikolaev; V. E. Bougrov; H. Lipsanen; A. E. Romanov

doi:10.1016/j.jcrysgro.2016.04.011

TEM study of defect structure of GaN epitaxial films grown on GaN/Al₂O₃ substrates with buried column pattern

M. G. Mynbaeva^*, A. V. Kremleva, D. A. Kirilenko, A. A. Sitnikova, A. I. Pechnikov, K. D. Mynbaev, V. I. Nikolaev, V. E. Bougrov, H. Lipsanen, A. E. Romanov

^*Corresponding author for this work

Harri Lipsanen Group

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al₂O₃ substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 10⁷ cm^-2, was achieved.

Original language	English
Pages (from-to)	30-36
Number of pages	7
Journal	Journal of Crystal Growth
Volume	445
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.04.011
Publication status	Published - 1 Jul 2016
MoE publication type	A1 Journal article-refereed

Keywords

Defects
Hydride vapor phase epitaxy
Metalorganic chemical vapor deposition
Semiconducting III-V materials

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10.1016/j.jcrysgro.2016.04.011

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Cite this

Mynbaeva, M. G., Kremleva, A. V., Kirilenko, D. A., Sitnikova, A. A., Pechnikov, A. I., Mynbaev, K. D., Nikolaev, V. I., Bougrov, V. E., Lipsanen, H., & Romanov, A. E. (2016). TEM study of defect structure of GaN epitaxial films grown on GaN/Al₂O₃ substrates with buried column pattern. Journal of Crystal Growth, 445, 30-36. https://doi.org/10.1016/j.jcrysgro.2016.04.011

@article{64de475882994b50b735cedce66261a3,

title = "TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern",

abstract = "A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.",

keywords = "Defects, Hydride vapor phase epitaxy, Metalorganic chemical vapor deposition, Semiconducting III-V materials",

author = "Mynbaeva, {M. G.} and Kremleva, {A. V.} and Kirilenko, {D. A.} and Sitnikova, {A. A.} and Pechnikov, {A. I.} and Mynbaev, {K. D.} and Nikolaev, {V. I.} and Bougrov, {V. E.} and H. Lipsanen and Romanov, {A. E.}",

year = "2016",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2016.04.011",

language = "English",

volume = "445",

pages = "30--36",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TEM study of defect structure of GaN epitaxial films grown on GaN/Al₂O₃ substrates with buried column pattern. / Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

In: Journal of Crystal Growth, Vol. 445, 01.07.2016, p. 30-36.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

AU - Mynbaeva, M. G.

AU - Kremleva, A. V.

AU - Kirilenko, D. A.

AU - Sitnikova, A. A.

AU - Pechnikov, A. I.

AU - Mynbaev, K. D.

AU - Nikolaev, V. I.

AU - Bougrov, V. E.

AU - Lipsanen, H.

AU - Romanov, A. E.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

AB - A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

KW - Defects

KW - Hydride vapor phase epitaxy

KW - Metalorganic chemical vapor deposition

KW - Semiconducting III-V materials

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