Tantalum carbide and nitride diffusion barriers for Cu metallisation

T. Laurila*, K. Zeng, J. K. Kivilahti, J. Molarius, T. Riekkinen, I. Suni

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    50 Citations (Scopus)


    The reactions in the Si/TaC/Cu and Si/Ta2N/Cu metallisation systems were investigated by X-ray diffraction, Rutherford backscattering, scanning electron microscope and the transmission electron microscopy. The results were then combined with the assessed ternary Si-Ta-C, Ta-C-Cu, Si-Ta-N and Ta-N-Cu phase diagrams. It was found that both barriers ultimately failed due to diffusion of Cu through the barrier and accompanied formation of Cu3Si at temperatures higher than 725°C. However, in the TaC barriers the formation of amorphous TaOx layer with significant amounts of C took place at the TaC/Cu interface already at 600°C. Similar behaviour at 'low' temperatures was also noted in the Ta2N barriers.

    Original languageEnglish
    Pages (from-to)71-80
    Number of pages10
    JournalMicroelectronic Engineering
    Issue number1-2
    Publication statusPublished - Jan 2002
    MoE publication typeA1 Journal article-refereed


    • Copper metallisation, tantalum carbide
    • Diffusion barriers
    • Phase diagrams
    • Tantalum nitride

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