Tailoring of Optoelectronic Properties of ϵ-Fe2O3 Thin Films Through Insertion of Organic Interlayers
Research output: Contribution to journal › Article › Scientific › peer-review
Combined atomic/molecular layer deposition (ALD/MLD) technique enables the engineering of inorganic–organic superlattices with atomic/molecular layer accuracy for the individual layer thicknesses. Here we demonstrate how the optical and electronic properties of ϵ-Fe2O3 thin films can be gradually tuned with an insertion of monomolecular organic layers. In our ϵ-Fe2O3:benzene superlattice (SL) structures the thickness of individual iron oxide layers varies in the range of 1–17 nm. With decreasing ϵ-Fe2O3 layer thickness, that is, SL period, the films become more transparent. Moreover revealed from the UV–vis spectra is that the indirect optical bandgap increases from ≈2.0 eV for ϵ-Fe2O3 up to ≈2.3 eV for the SL films with the shortest SL period. We foresee that the ALD/MLD approach presented here for the ϵ-Fe2O3–benzene thin films can be exploited in fabricating many other interesting hybrid material systems with controlled optoelectronic properties.
|Number of pages||5|
|Journal||Physica Status Solidi - Rapid Research Letters|
|Publication status||Published - 2018|
|MoE publication type||A1 Journal article-refereed|
- atomic layer deposition, epsilon iron oxide, inorganic–organic superlattices, molecular layer deposition, optical properties