Tailoring of Optoelectronic Properties of ϵ-Fe2O3 Thin Films Through Insertion of Organic Interlayers

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Abstract

Combined atomic/molecular layer deposition (ALD/MLD) technique enables the engineering of inorganic–organic superlattices with atomic/molecular layer accuracy for the individual layer thicknesses. Here we demonstrate how the optical and electronic properties of ϵ-Fe2O3 thin films can be gradually tuned with an insertion of monomolecular organic layers. In our ϵ-Fe2O3:benzene superlattice (SL) structures the thickness of individual iron oxide layers varies in the range of 1–17 nm. With decreasing ϵ-Fe2O3 layer thickness, that is, SL period, the films become more transparent. Moreover revealed from the UV–vis spectra is that the indirect optical bandgap increases from ≈2.0 eV for ϵ-Fe2O3 up to ≈2.3 eV for the SL films with the shortest SL period. We foresee that the ALD/MLD approach presented here for the ϵ-Fe2O3–benzene thin films can be exploited in fabricating many other interesting hybrid material systems with controlled optoelectronic properties.

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Original languageEnglish
Article number1800390
Number of pages5
JournalPhysica Status Solidi - Rapid Research Letters
Volume12
Issue number12
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • atomic layer deposition, epsilon iron oxide, inorganic–organic superlattices, molecular layer deposition, optical properties

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