Tailoring of energy levels in strain-induced quantum dots

Research output: Contribution to journalArticle

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

High-quality strain-induced quantum dots with properties that can be tailored have been fabricated by growing small InP islands on top of an InGaAs/GaAs near-surface quantum well. The quantum dots show small inhomogeneous broadening, and peaks from the ground and excited state transitions are well resolved in the photoluminescence spectra measured from the dots. The depth of the confining potential and the energy level separation can be varied over a relatively wide range from 35 meV to 100 meV and from 7meV to 25 meV, respectively, by changing the top barrier thickness of the near-surface quantum well and/or the size of the stressor islands.

Details

Original languageEnglish
Pages (from-to)1081-1084
Number of pages4
JournalJapanese Journal of Applied Physics
Volume38
Issue number2B
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

    Research areas

  • InP islands, Photoluminescence, Quantum dots, Self-organizing growth, Stressors

ID: 5547533