Tailoring Femtosecond-Laser Processed Black Silicon for Reduced Carrier Recombination Combined with >95% Above-Bandgap Absorption

Engineering

• Silicon 100%
• Recombination 100%
• Femtosecond Laser 100%
• Absorptance 50%
• Carrier Lifetime 33%
• Minority Carrier 33%
• Laser Parameter 33%
• Performance 16%
• Atomic Layer 16%
• Surfaces 16%
• Induced Damage 16%
• Spectral Range 16%
• Pulsed Laser 16%
• Charge Carrier 16%
• Surface Morphology 16%
• Average Power 16%
• Recombination Lifetime 16%
• High Amount 16%
• Injection Level 16%
• Scan Speed 16%
• Femtosecond 16%
• Focal Position 16%
• Based Optoelectronic Device 16%

Physics

• Silicon 100%
• Laser 100%
• Recombination 100%
• Energy Gaps (Solid State) 100%
• Absorptance 50%
• Independent Variables 33%
• Performance 16%
• Speed 16%
• Broadband 16%
• Optoelectronic Device 16%
• Spectra 16%
• Injection 16%
• Pulsed Laser 16%

Material Science

• Laser 100%
• Surface Passivation 50%
• Carrier Lifetime 33%
• Surface 16%
• Devices 16%
• Optoelectronics 16%
• Al2O3 16%
• Charge Carrier 16%
• Surface Morphology 16%