Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon

Erin E. Looney; Hannu S. Laine; Mallory A. Jensen; Amanda Youssef; Vincenzo LaSalvia; Paul Stradins; Tonio Buonassisi

doi:10.1109/PVSC.2017.8366688

Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon

Erin E. Looney^*, Hannu S. Laine, Mallory A. Jensen, Amanda Youssef, Vincenzo LaSalvia, Paul Stradins, Tonio Buonassisi

^*Corresponding author for this work

Department of Electronics and Nanoengineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

Abstract

Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6 +/- 0.5eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

Original language	English
Title of host publication	2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
Publisher	IEEE
Pages	1491-1493
Number of pages	3
ISBN (Print)	978-1-5090-5605-7
DOIs	https://doi.org/10.1109/PVSC.2017.8366688
Publication status	Published - 2017
MoE publication type	A4 Article in a conference publication
Event	IEEE Photovoltaic Specialists Conference - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 Conference number: 44

Publication series

Name	IEEE Photovoltaic Specialists Conference
Publisher	IEEE
ISSN (Print)	0160-8371

Conference

Conference	IEEE Photovoltaic Specialists Conference
Abbreviated title	PVSC
Country/Territory	United States
City	Washington
Period	25/06/2017 → 30/06/2017

Keywords

oxygen related defects
monocrystalline silicon
tabula rasa
thin wafering
precipitate dissolution

Access to Document

10.1109/PVSC.2017.8366688

OpenUrl availability

Full text

Cite this

Looney, E. E., Laine, H. S., Jensen, M. A., Youssef, A., LaSalvia, V., Stradins, P., & Buonassisi, T. (2017). Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon. In 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) (pp. 1491-1493). (IEEE Photovoltaic Specialists Conference). IEEE. https://doi.org/10.1109/PVSC.2017.8366688

@inproceedings{8be11835dce74bd0ac645673d9526112,

title = "Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon",

abstract = "Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6 +/- 0.5eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.",

keywords = "oxygen related defects, monocrystalline silicon, tabula rasa, thin wafering, precipitate dissolution",

author = "Looney, {Erin E.} and Laine, {Hannu S.} and Jensen, {Mallory A.} and Amanda Youssef and Vincenzo LaSalvia and Paul Stradins and Tonio Buonassisi",

year = "2017",

doi = "10.1109/PVSC.2017.8366688",

language = "English",

isbn = "978-1-5090-5605-7",

series = "IEEE Photovoltaic Specialists Conference",

publisher = "IEEE",

pages = "1491--1493",

booktitle = "2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 25-06-2017 Through 30-06-2017",

}

Looney, EE, Laine, HS, Jensen, MA, Youssef, A, LaSalvia, V, Stradins, P & Buonassisi, T 2017, Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon. in 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). IEEE Photovoltaic Specialists Conference, IEEE, pp. 1491-1493, IEEE Photovoltaic Specialists Conference, Washington, District of Columbia, United States, 25/06/2017. https://doi.org/10.1109/PVSC.2017.8366688

Tabula Rasa : Oxygen precipitate dissolution though rapid high temperature processing in silicon. / Looney, Erin E.; Laine, Hannu S.; Jensen, Mallory A. et al.

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC). IEEE, 2017. p. 1491-1493 (IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Tabula Rasa

T2 - IEEE Photovoltaic Specialists Conference

AU - Looney, Erin E.

AU - Laine, Hannu S.

AU - Jensen, Mallory A.

AU - Youssef, Amanda

AU - LaSalvia, Vincenzo

AU - Stradins, Paul

AU - Buonassisi, Tonio

N1 - Conference code: 44

PY - 2017

Y1 - 2017

N2 - Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6 +/- 0.5eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

AB - Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6 +/- 0.5eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

KW - oxygen related defects

KW - monocrystalline silicon

KW - tabula rasa

KW - thin wafering

KW - precipitate dissolution

U2 - 10.1109/PVSC.2017.8366688

DO - 10.1109/PVSC.2017.8366688

M3 - Conference contribution

SN - 978-1-5090-5605-7

T3 - IEEE Photovoltaic Specialists Conference

SP - 1491

EP - 1493

BT - 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)

PB - IEEE

Y2 - 25 June 2017 through 30 June 2017

ER -

Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon

Abstract

Publication series

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this