Tabula Rasa: Oxygen precipitate dissolution though rapid high temperature processing in silicon

Erin E. Looney*, Hannu S. Laine, Mallory A. Jensen, Amanda Youssef, Vincenzo LaSalvia, Paul Stradins, Tonio Buonassisi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Over one fourth of all monocrystalline silicon ingots suffer from a 20% performance degradation due to oxygen precipitates. Tabula Rasa (TR) is a mitigation technique that dissolves these precipitates, making them harmless. This work explores the dependence of oxygen dissolution on annealing time and temperature for the TR process to aid in solar cell process optimization. The dissolution time for oxygen precipitates was found to be more than 10 minutes for total dissolution, longer than normal TR process times in the electronics industry. The activation energy, extracted from the precipitate dissolution curves, is found to be 2.6 +/- 0.5eV. This value when compared to the migration enthalpy of oxygen in silicon can be used to reveal the energy limiting proces in TR.

Original languageEnglish
Title of host publication2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
PublisherIEEE
Pages1491-1493
Number of pages3
ISBN (Print)978-1-5090-5605-7
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication
EventIEEE Photovoltaic Specialists Conference - Washington, United States
Duration: 25 Jun 201730 Jun 2017
Conference number: 44

Publication series

NameIEEE Photovoltaic Specialists Conference
PublisherIEEE
ISSN (Print)0160-8371

Conference

ConferenceIEEE Photovoltaic Specialists Conference
Abbreviated titlePVSC
CountryUnited States
CityWashington
Period25/06/201730/06/2017

Keywords

  • oxygen related defects
  • monocrystalline silicon
  • tabula rasa
  • thin wafering
  • precipitate dissolution

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