Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

R. Drost; Kezilebieke Shawulienu; Mikko Ervasti; Sampsa Hämäläinen; F. Schulz; A. Harju; P. Liljeroth

doi:10.1038/srep16741

Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

R. Drost, Kezilebieke Shawulienu, Mikko Ervasti, Sampsa Hämäläinen, F. Schulz, A. Harju, P. Liljeroth

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Abstract

The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

Original language	English
Article number	16741
Pages (from-to)	1-8
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep16741
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

graphene
hexagonal boron nitride
scanning tunneling microscopy
Two-dimensional materials

Access to Document

10.1038/srep16741

srep16741Final published version, 1.15 MBLicence: CC BY

Cite this

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title = "Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces",

abstract = "The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.",

keywords = "graphene, hexagonal boron nitride, scanning tunneling microscopy, Two-dimensional materials, graphene, hexagonal boron nitride, scanning tunneling microscopy, Two-dimensional materials, graphene, hexagonal boron nitride, scanning tunneling microscopy, Two-dimensional materials",

author = "R. Drost and Kezilebieke Shawulienu and Mikko Ervasti and Sampsa H{\"a}m{\"a}l{\"a}inen and F. Schulz and A. Harju and P. Liljeroth",

year = "2015",

doi = "10.1038/srep16741",

language = "English",

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journal = "Scientific Reports",

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T1 - Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

AU - Drost, R.

AU - Shawulienu, Kezilebieke

AU - Ervasti, Mikko

AU - Hämäläinen, Sampsa

AU - Schulz, F.

AU - Harju, A.

AU - Liljeroth, P.

PY - 2015

Y1 - 2015

N2 - The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

AB - The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.

KW - graphene

KW - hexagonal boron nitride

KW - scanning tunneling microscopy

KW - Two-dimensional materials

KW - graphene

KW - hexagonal boron nitride

KW - scanning tunneling microscopy

KW - Two-dimensional materials

KW - graphene

KW - hexagonal boron nitride

KW - scanning tunneling microscopy

KW - Two-dimensional materials

UR - http://www.nature.com/articles/srep16741

U2 - 10.1038/srep16741

DO - 10.1038/srep16741

M3 - Article

SN - 2045-2322

VL - 5

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EP - 8

JO - Scientific Reports

JF - Scientific Reports

M1 - 16741

ER -

Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

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Keywords

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Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces

Abstract

Keywords

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ERC Liljeroth (ERC)

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OtaNano

OtaNano - Nanomicroscopy Center

Science-IT

Cite this