Synthesis and properties of ultra-long InP nanowires on glass
Research output: Contribution to journal › Article › Scientific › peer-review
Standard
Synthesis and properties of ultra-long InP nanowires on glass. / Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri.
In: Nanotechnology, Vol. 27, No. 50, 505606, 2016.Research output: Contribution to journal › Article › Scientific › peer-review
Harvard
APA
Vancouver
Author
Bibtex - Download
}
RIS - Download
TY - JOUR
T1 - Synthesis and properties of ultra-long InP nanowires on glass
AU - Dhaka, Veer
AU - Pale, Ville
AU - Khayrudinov, Vladislav
AU - Kakko, Joona-Pekko
AU - Haggren, Tuomas
AU - Jiang, Hua
AU - Kauppinen, Esko
AU - Lipsanen, Harri
PY - 2016
Y1 - 2016
N2 - We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μ m) InP NWs, with an exceptionally high growth rate of ∼25 μ m min −1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%–95% for λ = 300–1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III–V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.
AB - We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μ m) InP NWs, with an exceptionally high growth rate of ∼25 μ m min −1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%–95% for λ = 300–1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III–V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.
KW - InP semiconductor nanowires
KW - glass substrate
KW - MOVPE/MOCVD
U2 - 10.1088/0957-4484/27/50/505606
DO - 10.1088/0957-4484/27/50/505606
M3 - Article
VL - 27
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 50
M1 - 505606
ER -
ID: 9516684