Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy

Research output: Contribution to journalArticle


  • Juha Riikonen
  • Turkka Tuomi
  • Aapo Lankinen
  • Jaakko Sormunen
  • Antti Säynätjoki
  • Lauri Knuuttila
  • Harri Lipsanen

  • P.J. McNally
  • A. Danilewsky
  • H. Sipilä
  • S. Vaijärvi
  • D. Lumb
  • A. Owens

Research units

  • Dublin City University
  • University of Freiburg
  • Metorex International Oy
  • European Space Agency - ESA


Original languageEnglish
Pages (from-to)449-453
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue number7
Publication statusPublished - Jul 2005
MoE publication typeA1 Journal article-refereed

    Research areas

  • crystal defects, epitaxy, semiconductor compounds, x-ray topography

ID: 4146970