Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p-i-n structures

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • RAS - Ioffe Physico Technical Institute
  • Vapor Phase Epitaxy and Devices Ltd.

Details

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalNUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume591
Issue number1
Publication statusPublished - 11 Jun 2008
MoE publication typeA1 Journal article-refereed

    Research areas

  • GaAs, synchrotron topography

ID: 3625579