Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs
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Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs. / McNally, P.; Tuomi, T.; Herbert, P.; Baric, A.; Äyräs, P.; Karilahti, M.; Lipsanen, H.; Tromby, M.
In: IEEE Transactions on Electron Devices, Vol. 43, No. 7, 07.1996, p. 1085-1091.Research output: Contribution to journal › Article › Scientific › peer-review
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TY - JOUR
T1 - Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs
AU - McNally, P.
AU - Tuomi, T.
AU - Herbert, P.
AU - Baric, A.
AU - Äyräs, P.
AU - Karilahti, M.
AU - Lipsanen, H.
AU - Tromby, M.
PY - 1996/7
Y1 - 1996/7
KW - optoelectronics
KW - semiconductors
KW - optoelectronics
KW - semiconductors
KW - optoelectronics
KW - semiconductors
U2 - 10.1109/16.502419
DO - 10.1109/16.502419
M3 - Article
VL - 43
SP - 1085
EP - 1091
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 7
ER -
ID: 4878044
