Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs

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Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs. / McNally, P.; Tuomi, T.; Herbert, P.; Baric, A.; Äyräs, P.; Karilahti, M.; Lipsanen, H.; Tromby, M.

In: IEEE Transactions on Electron Devices, Vol. 43, No. 7, 07.1996, p. 1085-1091.

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McNally, P. ; Tuomi, T. ; Herbert, P. ; Baric, A. ; Äyräs, P. ; Karilahti, M. ; Lipsanen, H. ; Tromby, M. / Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs. In: IEEE Transactions on Electron Devices. 1996 ; Vol. 43, No. 7. pp. 1085-1091.

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@article{81b06111eb504e3087162143793b3f85,
title = "Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs",
keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",
author = "P. McNally and T. Tuomi and P. Herbert and A. Baric and P. {\"A}yr{\"a}s and M. Karilahti and H. Lipsanen and M. Tromby",
year = "1996",
month = "7",
doi = "10.1109/16.502419",
language = "English",
volume = "43",
pages = "1085--1091",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "7",

}

RIS - Download

TY - JOUR

T1 - Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs

AU - McNally, P.

AU - Tuomi, T.

AU - Herbert, P.

AU - Baric, A.

AU - Äyräs, P.

AU - Karilahti, M.

AU - Lipsanen, H.

AU - Tromby, M.

PY - 1996/7

Y1 - 1996/7

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

U2 - 10.1109/16.502419

DO - 10.1109/16.502419

M3 - Article

VL - 43

SP - 1085

EP - 1091

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -

ID: 4878044