Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs

Research output: Contribution to journalArticle


  • P. McNally
  • T. Tuomi
  • P. Herbert
  • A. Baric
  • P. Äyräs
  • M. Karilahti
  • Harri Lipsanen

  • M. Tromby

Research units

  • Dublin City University
  • Alcatel-Telettra Research Center


Original languageEnglish
Pages (from-to)1085-1091
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - Jul 1996
MoE publication typeA1 Journal article-refereed

    Research areas

  • optoelectronics, semiconductors

ID: 4878044