@article{0195d39deaf148ce8f76242cc4fec772,
title = "Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy",
keywords = "crystal defects, epitaxy, semiconductor compounds, x-ray topography, crystal defects, epitaxy, semiconductor compounds, x-ray topography, crystal defects, epitaxy, semiconductor compounds, x-ray topography",
author = "Juha Riikonen and Turkka Tuomi and Aapo Lankinen and Jaakko Sormunen and Antti S{\"a}yn{\"a}tjoki and Lauri Knuuttila and Harri Lipsanen and P.J. McNally and A. Danilewsky and H. Sipil{\"a} and S. Vaij{\"a}rvi and D. Lumb and A. Owens",
year = "2005",
month = jul,
doi = "10.1007/s10854-005-2313-5",
language = "English",
volume = "16",
pages = "449--453",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "1573-482X",
publisher = "Springer",
number = "7",
}