Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy

Juha Riikonen; Turkka Tuomi; Aapo Lankinen; Jaakko Sormunen; Antti Säynätjoki; Lauri Knuuttila; Harri Lipsanen; P.J McNally; A. Danilewsky; H. Sipilä; S. Vaijärvi; D. Lumb; A. Owens

Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy

Juha Riikonen, Turkka Tuomi, Aapo Lankinen, Jaakko Sormunen, Antti Säynätjoki, Lauri Knuuttila, Harri Lipsanen, P.J McNally, A. Danilewsky, H. Sipilä, S. Vaijärvi, D. Lumb, A. Owens

Research output: Working paper › Professional

Original language	English
Publication status	Published - 2004
MoE publication type	D4 Published development or research report or study

Publication series

Name	Materials for Microelectronics and Nanoengineering 5th International Conference

Cite this

Riikonen, J., Tuomi, T., Lankinen, A., Sormunen, J., Säynätjoki, A., Knuuttila, L., Lipsanen, H., McNally, P. J., Danilewsky, A., Sipilä, H., Vaijärvi, S., Lumb, D., & Owens, A. (2004). Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy. (Materials for Microelectronics and Nanoengineering 5th International Conference).

Riikonen, Juha ; Tuomi, Turkka ; Lankinen, Aapo ; Sormunen, Jaakko ; Säynätjoki, Antti ; Knuuttila, Lauri ; Lipsanen, Harri ; McNally, P.J ; Danilewsky, A. ; Sipilä, H. ; Vaijärvi, S. ; Lumb, D. ; Owens, A. / Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy. 2004. (Materials for Microelectronics and Nanoengineering 5th International Conference).

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title = "Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy",

author = "Juha Riikonen and Turkka Tuomi and Aapo Lankinen and Jaakko Sormunen and Antti S{\"a}yn{\"a}tjoki and Lauri Knuuttila and Harri Lipsanen and P.J McNally and A. Danilewsky and H. Sipil{\"a} and S. Vaij{\"a}rvi and D. Lumb and A. Owens",

year = "2004",

language = "English",

series = "Materials for Microelectronics and Nanoengineering 5th International Conference",

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Riikonen, J, Tuomi, T, Lankinen, A, Sormunen, J, Säynätjoki, A, Knuuttila, L, Lipsanen, H, McNally, PJ, Danilewsky, A, Sipilä, H, Vaijärvi, S, Lumb, D & Owens, A 2004 'Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy' Materials for Microelectronics and Nanoengineering 5th International Conference.

Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy. / Riikonen, Juha; Tuomi, Turkka; Lankinen, Aapo; Sormunen, Jaakko; Säynätjoki, Antti; Knuuttila, Lauri; Lipsanen, Harri; McNally, P.J; Danilewsky, A.; Sipilä, H.; Vaijärvi, S.; Lumb, D.; Owens, A.

2004. (Materials for Microelectronics and Nanoengineering 5th International Conference).

Research output: Working paper › Professional

TY - UNPB

T1 - Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy

AU - Riikonen, Juha

AU - Tuomi, Turkka

AU - Lankinen, Aapo

AU - Sormunen, Jaakko

AU - Säynätjoki, Antti

AU - Knuuttila, Lauri

AU - Lipsanen, Harri

AU - McNally, P.J

AU - Danilewsky, A.

AU - Sipilä, H.

AU - Vaijärvi, S.

AU - Lumb, D.

AU - Owens, A.

PY - 2004

Y1 - 2004

M3 - Working paper

T3 - Materials for Microelectronics and Nanoengineering 5th International Conference

BT - Synchrotron X-ray Topography Study of Defects in Indium Antimonide P-I-N Structures Grown by Metal Organic Vapour Phase Epitaxy

ER -