Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy

Juha Riikonen, Turkka Tuomi, Aapo Lankinen, Jaakko Sormunen, Antti Säynätjoki, Lauri Knuuttila, Harri Lipsanen, P.J. McNally, A. Danilewsky, H. Sipilä, S. Vaijärvi, D. Lumb, A. Owens

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)449-453
    Number of pages5
    JournalJournal of Materials Science: Materials in Electronics
    Volume16
    Issue number7
    DOIs
    Publication statusPublished - Jul 2005
    MoE publication typeA1 Journal article-refereed

    Keywords

    • crystal defects
    • epitaxy
    • semiconductor compounds
    • x-ray topography

    Cite this

    Riikonen, J., Tuomi, T., Lankinen, A., Sormunen, J., Säynätjoki, A., Knuuttila, L., Lipsanen, H., McNally, P. J., Danilewsky, A., Sipilä, H., Vaijärvi, S., Lumb, D., & Owens, A. (2005). Synchrotron x-ray topography study of defects in indium antimonide p-i-n structures grown by metal organic vapour phase epitaxy. Journal of Materials Science: Materials in Electronics, 16(7), 449-453. https://doi.org/10.1007/s10854-005-2313-5