Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge

Aapo Lankinen; Lauri Knuuttila; Turkka Tuomi; Pasi Kostamo; Antti Säynätjoki; Juha Riikonen; Harri Lipsanen; P.J. McNally; X. Lu; H. Sipilä; S. Vaijärvi; D. Lumb

doi:10.1016/j.nima.2006.01.066

Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge

Aapo Lankinen, Lauri Knuuttila, Turkka Tuomi, Pasi Kostamo, Antti Säynätjoki, Juha Riikonen, Harri Lipsanen, P.J. McNally, X. Lu, H. Sipilä, S. Vaijärvi, D. Lumb

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Original language	English
Pages (from-to)	62-65
Number of pages	4
Journal	NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume	563
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2006.01.066
Publication status	Published - 1 Jul 2006
MoE publication type	A1 Journal article-refereed

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10.1016/j.nima.2006.01.066

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Lankinen, A., Knuuttila, L., Tuomi, T., Kostamo, P., Säynätjoki, A., Riikonen, J., ... Lumb, D. (2006). Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge. NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 563(1), 62-65. https://doi.org/10.1016/j.nima.2006.01.066

Lankinen, Aapo ; Knuuttila, Lauri ; Tuomi, Turkka ; Kostamo, Pasi ; Säynätjoki, Antti ; Riikonen, Juha ; Lipsanen, Harri ; McNally, P.J. ; Lu, X. ; Sipilä, H. ; Vaijärvi, S. ; Lumb, D. / Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge. In: NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. 2006 ; Vol. 563, No. 1. pp. 62-65.

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Lankinen, A, Knuuttila, L, Tuomi, T, Kostamo, P, Säynätjoki, A, Riikonen, J, Lipsanen, H, McNally, PJ, Lu, X, Sipilä, H, Vaijärvi, S & Lumb, D 2006, 'Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge', NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol. 563, no. 1, pp. 62-65. https://doi.org/10.1016/j.nima.2006.01.066

Synchrotron x-ray topography study of defects in epitaxial GaAs on high-quality Ge. / Lankinen, Aapo; Knuuttila, Lauri; Tuomi, Turkka; Kostamo, Pasi; Säynätjoki, Antti; Riikonen, Juha; Lipsanen, Harri; McNally, P.J.; Lu, X.; Sipilä, H.; Vaijärvi, S.; Lumb, D.

In: NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, Vol. 563, No. 1, 01.07.2006, p. 62-65.

Research output: Contribution to journal › Article › Scientific › peer-review

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AU - Lankinen, Aapo

AU - Knuuttila, Lauri

AU - Tuomi, Turkka

AU - Kostamo, Pasi

AU - Säynätjoki, Antti

AU - Riikonen, Juha

AU - Lipsanen, Harri

AU - McNally, P.J.

AU - Lu, X.

AU - Sipilä, H.

AU - Vaijärvi, S.

AU - Lumb, D.

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JO - NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

JF - NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION A: ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

SN - 0168-9002

IS - 1

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