Synchrotron x-ray topography of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth

R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)pp. A114-A118
    JournalJournal of Physics D: Applied Physics
    Volume32
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Keywords

    • gallium arsenide
    • overgrowth
    • syncgrotron
    • x-ray topography

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