Synchrotron X-ray topography of epitaxial lateral overgrowth of GaN on sapphire

P.J. McNally, M. "O'Hare", T. Tuomi, R. Rantamäki, K. Jacobs, L. Considine, A.N. Danilewsky

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationSan Fransisco, California
    Publication statusPublished - 1999
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameMaterials Research Society 1999 Spring Meeting, San Francisco, California, USA, April 4-9


    • epitaxial
    • gallium nitride
    • lateral
    • overgrown
    • sapphire
    • synchrotron
    • x-ray topography

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