Synchrotron X-ray topographic study of Si wafers for advanced 0.25 µm and 0.35 µm CMOS technology

P. McNally, A. Reader, T. Tuomi, P. Herbert, A.N. Danilewsky

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Scientific › peer-review

Original language	English
Title of host publication	HASYLAB-DESY Annual Report 1995
Pages	679-680
Publication status	Published - 1996
MoE publication type	A3 Book section, Chapters in research books

Keywords

@inbook{71604205ca67475dae134dcf20c554dd,

title = "Synchrotron X-ray topographic study of Si wafers for advanced 0.25 µm and 0.35 µm CMOS technology",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "P. McNally and A. Reader and T. Tuomi and P. Herbert and A.N. Danilewsky",

year = "1996",

language = "English",

pages = "679--680",

booktitle = "HASYLAB-DESY Annual Report 1995",

}

TY - CHAP

T1 - Synchrotron X-ray topographic study of Si wafers for advanced 0.25 µm and 0.35 µm CMOS technology

AU - McNally, P.

AU - Reader, A.

AU - Tuomi, T.

AU - Herbert, P.

AU - Danilewsky, A.N.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Chapter

SP - 679

EP - 680

BT - HASYLAB-DESY Annual Report 1995

ER -