Synchrotron X-ray topographic study of LOCOS device structures on Si wafers for advanced 0.35 µm CMOS technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › Scientific › peer-review

Original language	English
Title of host publication	HASYLAB-DESY Annual Report 1995
Pages	691-692
Publication status	Published - 1996
MoE publication type	A3 Book section, Chapters in research books

Keywords

@inbook{c7dcbabd2f4f4b7d8fbfc25d26e49154,

title = "Synchrotron X-ray topographic study of LOCOS device structures on Si wafers for advanced 0.35 µm CMOS technology",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "P. McNally and J. Curley and A. Reader and T. Tuomi and M. Taskinen and A. Danilewsky and J. Bibus and P. Herbert",

year = "1996",

language = "English",

pages = "691--692",

booktitle = "HASYLAB-DESY Annual Report 1995",

}

TY - CHAP

T1 - Synchrotron X-ray topographic study of LOCOS device structures on Si wafers for advanced 0.35 µm CMOS technology

AU - McNally, P.

AU - Curley, J.

AU - Reader, A.

AU - Tuomi, T.

AU - Taskinen, M.

AU - Danilewsky, A.

AU - Bibus, J.

AU - Herbert, P.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Chapter

SP - 691

EP - 692

BT - HASYLAB-DESY Annual Report 1995

ER -