Synchrotron x-ray topographic and high-resolution diffration analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers

R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, J. Domagala, P.J. McNally, A.N. Danilewsky

    Research output: Contribution to journalArticleScientificpeer-review

    16 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)4298-4303
    JournalJournal of Applied Physics
    Volume86
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Keywords

    • diffraction
    • epitasial
    • gallium arsenide
    • overgrown
    • strain
    • synchrotron
    • x-ray topography

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