Synchrotron X-ray topographic analysis of the impact of processing steps on the fabrication of AlGaAs/InGaAs p-HEMTs

P. McNally, T. Tuomi, P. Herbert, A. Baric, P. Äyräs, M. Karilahti, H. Lipsanen, M. Tromby

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)1085-1091
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Issue number7
    Publication statusPublished - Jul 1996
    MoE publication typeA1 Journal article-refereed


    • optoelectronics
    • semiconductors

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