Synchrotron topography for defect characterization in III-V semiconductors.

T. Tuomi; A. Danilewsky; P. McNally; M. Taskinen; M. Schweitzer

Synchrotron topography for defect characterization in III-V semiconductors.

T. Tuomi, A. Danilewsky, P. McNally, M. Taskinen, M. Schweitzer

Research output: Working paper › Professional

Original language	English
Place of Publication	Karlsruhe, Germany
Pages	s.
Publication status	Published - 1995
MoE publication type	D4 Published development or research report or study

Keywords

semiconductors, synchrotron X-ray topography

Cite this

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title = "Synchrotron topography for defect characterization in III-V semiconductors.",

keywords = "semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography, semiconductors, synchrotron X-ray topography",

author = "T. Tuomi and A. Danilewsky and P. McNally and M. Taskinen and M. Schweitzer",

year = "1995",

language = "English",

pages = "s.",

type = "WorkingPaper",

}

TY - UNPB

T1 - Synchrotron topography for defect characterization in III-V semiconductors.

AU - Tuomi, T.

AU - Danilewsky, A.

AU - McNally, P.

AU - Taskinen, M.

AU - Schweitzer, M.

PY - 1995

Y1 - 1995

KW - semiconductors, synchrotron X-ray topography

M3 - Working paper

SP - s.

BT - Synchrotron topography for defect characterization in III-V semiconductors.

CY - Karlsruhe, Germany

ER -