Synchrotron topography for defect characterization in III-V semiconductors.

T. Tuomi, A. Danilewsky, P. McNally, M. Taskinen, M. Schweitzer

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationKarlsruhe, Germany
    Pagess.
    Publication statusPublished - 1995
    MoE publication typeD4 Published development or research report or study

    Keywords

    • semiconductors, synchrotron X-ray topography

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