Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • Optogan Oy
  • Dublin City University


Original languageEnglish
Pages (from-to)4619-4627
Number of pages9
JournalJournal of Crystal Growth
Issue number22
Publication statusPublished - 1 Nov 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • indium gallium phosphide, synchrotron x-ray topography, x-ray diffraction

ID: 3500851