Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge

A. Lankinen, L. Knuuttila, P. Kostamo, T.O. Tuomi, H. Lipsanen, P.J. McNally, L. "O'Reilly"

    Research output: Contribution to journalArticleScientificpeer-review

    12 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)4619-4627
    Number of pages9
    JournalJournal of Crystal Growth
    Volume311
    Issue number22
    DOIs
    Publication statusPublished - 1 Nov 2009
    MoE publication typeA1 Journal article-refereed

    Keywords

    • indium gallium phosphide
    • synchrotron x-ray topography
    • x-ray diffraction

    Cite this

    Lankinen, A., Knuuttila, L., Kostamo, P., Tuomi, T. O., Lipsanen, H., McNally, P. J., & "O'Reilly", L. (2009). Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge. Journal of Crystal Growth, 311(22), 4619-4627. https://doi.org/10.1016/j.jcrysgro.2009.08.032