Synchrotron topographic study of defects in semi-insulating gallium arsenide wafers

E. Prieur, J. Partanen, T. Tuomi, E. Yli-Juuti

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages50-51
    Publication statusPublished - 1993
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Helsinki University of Technology
    No.TKK-F-C148

    Keywords

    • GaAs
    • synchrotron topography

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