Synchrotron topographic study of defects in semi-insulating gallium arsenide wafers

E. Prieur, J. Partanen, T. Tuomi, E. Yli-Juuti

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	50-51
Publication status	Published - 1993
MoE publication type	D4 Published development or research report or study

Name	Optoelectronics Laboratory, Helsinki University of Technology
No.	TKK-F-C148

Keywords

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title = "Synchrotron topographic study of defects in semi-insulating gallium arsenide wafers",

keywords = "GaAs, synchrotron topography, GaAs, synchrotron topography, GaAs, synchrotron topography",

author = "E. Prieur and J. Partanen and T. Tuomi and E. Yli-Juuti",

year = "1993",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C148",

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TY - UNPB

T1 - Synchrotron topographic study of defects in semi-insulating gallium arsenide wafers

AU - Prieur, E.

AU - Partanen, J.

AU - Tuomi, T.

AU - Yli-Juuti, E.

PY - 1993

Y1 - 1993

KW - GaAs

KW - synchrotron topography

KW - GaAs

KW - synchrotron topography

KW - GaAs

KW - synchrotron topography

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 50

EP - 51

BT - Synchrotron topographic study of defects in semi-insulating gallium arsenide wafers

CY - Espoo

ER -