Synchrotron section topographic study of defects in InP substrates and quaternary laser structures

T. Tuomi*, H. Lipsanen, T. Ranta-aho, J. Partanen, J. A. Lahtinen, E. Monberg, R. A. Logan

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

Indium phosphide single crystals grown by the liquid encapsulated Czochralski (LEC) and vertical gradient freeze (VFG) techniques have been studied with X-ray diffraction topography using synchrotron radiation. Section topographs show that while the VGF substrates are of a better quality than the LEC ones, the defect level in epitaxial layers is more strongly determined by the quaternary layer composition and lattice mismatch than by threading dislocations from the substrate.

Original languageEnglish
Pages (from-to)881-887
Number of pages7
JournalJournal of Crystal Growth
Volume96
Issue number4
DOIs
Publication statusPublished - Aug 1989
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Synchrotron section topographic study of defects in InP substrates and quaternary laser structures'. Together they form a unique fingerprint.

  • Cite this