Synchrotron Section Topographic study of Czochralski-Grown Silicon Wafers for Advanced Memory Circuits

T. Tuomi, M. Tuominen, E. Prieur, J. Partanen, J. Lahtinen, J. Laakkonen

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1699-1701
    JournalJournal of the Electrochemical Society
    Volume142
    Publication statusPublished - 1995
    MoE publication typeA1 Journal article-refereed

    Keywords

    • silicon
    • synchrotron radiation
    • x-ray topography

    Cite this

    Tuomi, T., Tuominen, M., Prieur, E., Partanen, J., Lahtinen, J., & Laakkonen, J. (1995). Synchrotron Section Topographic study of Czochralski-Grown Silicon Wafers for Advanced Memory Circuits. Journal of the Electrochemical Society, 142, 1699-1701.