SWITCH SIMULATIONS OF A DOUBLE-BARRIER RESONANT-TUNNEL DIODE BASED CIRCUIT

Along with double barrier resonant tunneling devices becoming high speed engineering devices, there is a need for relatively simple and robust models for the dynamics of these devices. In this study a model for the device dynamics and numerical simulations of the switching process are presented. The model incorporates both the RC time due to the capacitorlike structure of the leads, and the loading/unloading time of the quantum well. During the simulation the local current densities, charge densities, the change in electron potential, and related changes in transmission probabilities are followed.