Suspended single-electron transistor as a detector of its nanomechanical motion

Yuri Pashkin*, Tiefu Li, Jukka Pekola, Oleg Astafiev, Dmitry Knyazev, Felix Hoehne, Hyunsik Im, Yasunobu Nakamura, Jaw Shen Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

We have fabricated an Al based single-electron transistor transistor (SET) whose island is suspended above the substrate. The structure can be considered as a two-in-one device containing a doubly clamped beam and a transducer that converts mechanical vibrations into variations in the SET current. In addition to the regular side gate, a bottom gate with a large capacitance, is placed beneath the SET island for increasing the SET coupling to the mechanical motion. The observed response is reproduced in our simulations, which are based on the orthodox model that considers the fundamental flexural mode of the resonating SET island.

Original languageEnglish
Title of host publicationICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
Pages340-342
Number of pages3
DOIs
Publication statusPublished - 1 Dec 2010
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Nanoscience and Nanotechnology - Sydney, Australia
Duration: 22 Feb 201026 Feb 2010
Conference number: 3

Conference

ConferenceInternational Conference on Nanoscience and Nanotechnology
Abbreviated titleICONN
Country/TerritoryAustralia
CitySydney
Period22/02/201026/02/2010

Keywords

  • Doubly clamped beam
  • Nanomechanical resonator
  • Single-electron transistor
  • Transducer

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