Surface preparation techniques for high-k deposition on Ge substrates

Sven Van Elshocht*, Annelies Delabie, Bert Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Riikka Puurunen, Olivier Richard, Jan Van Steenbergen, Chao Zhao, Marc Meuris, Marc M. Heyns

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

4 Citations (Scopus)

Abstract

Good quality HfO2 layers can be deposited on Ge substrates by both ALD and MOCVD. The surface preparation is especially critical for MOCVD, to prevent Ge diffusion in HfO2 and obtain smooth top surfaces. For ALD HfO2, both HF clean and NH3 anneal appear to be suitable surface preparations. The interfacial layers between Ge and HfO2 thickness and thermal stability of the Ge interfacial layers seems very promising for EOT scaling.

Original languageEnglish
Title of host publicationUltra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS)
PublisherTrans Tech Publications Ltd.
Pages31-34
Number of pages4
Volume103-104
ISBN (Print)390845106X, 9783908451068
DOIs
Publication statusPublished - 2005
MoE publication typeA4 Article in a conference publication
EventInternational Symposium on Ultra Clean Processing of Silicon Surfaces - Brussels, Belgium
Duration: 20 Sep 200422 Sep 2004
Conference number: 7

Publication series

NameSolid State Phenomena
PublisherTrans Tech Publications
Volume103-104
ISSN (Print)10120394

Conference

ConferenceInternational Symposium on Ultra Clean Processing of Silicon Surfaces
Abbreviated titleUCPSS
CountryBelgium
CityBrussels
Period20/09/200422/09/2004

Keywords

  • ALD
  • Germanium
  • MOCVD
  • Surface preparation

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